SEMICONDUCTOR DIODE
When a p-type semiconductor material is suitably joined to n-type semiconductor the contact surface is called a p-n junction. The p-n junction is also called as semiconductor diode.
• The left side material is a p-type semiconductor having –ve acceptor ions and +vely charged holes. The right side material is n-type semiconductor having +ve donor ions and free electrons.
• Suppose the two pieces are suitably treated to form pn junction, then there is a tendency for the free electrons from n-type to diffuse over to the p-side and holes from p-type to the n-side . This process is called diffusion.
• As the free electrons move across the junction from n-type to p-type, +ve donor ions are uncovered. Hence a +ve charge is built on the n-side of the junction. At the same time, the free electrons cross the junction and uncover the –ve acceptor ions by filling in the holes. Therefore a net –ve charge is established on p-side of the junction.
• When a sufficient number of donor and acceptor ions is uncovered further diffusion is prevented.
• Thus a barrier is set up against further movement of charge carriers. This is called potential barrier or junction barrier Vo. The potential barrier is of the order of 0.1 to 0.3V.
Note: outside this barrier on each side of the junction, the material is still neutral. Only inside the barrier, there is a +ve charge on n-side and –ve charge on p-side. This region is called depletion layer.
2.1 Biasing: Connecting a p-n junction to an external d.c. voltage source is called
biasing.
1. Forward biasing
2. Reverse biasing
1. Forward biasing
• When external voltage applied to the junction is in such a direction that it cancels the potential barrier, thus permitting current flow is called forward biasing.
• To apply forward bias, connect +ve terminal of the battery to p-type and –ve terminal to n-type as shown in fig.2.1 below.
• The applied forward potential establishes the electric field which acts against the field due to potential barrier. Therefore the resultant field is weakened and the barier height is reduced at the junction as shown in fig. 2.1.
• Since the potential barrier voltage is very small, a small forward voltage is sufficient to completely eliminate the barrier. Once the potential barrier is eliminated by the forward voltage, junction resistance becomes almost zero and a low resistance path is established for the entire circuit. Therefore current flows in the circuit. This is called forward current.
2. Reverse biasing
• When the external voltage applied to the junction is in such a direction the potential barrier is increased it is called reverse biasing.
• To apply reverse bias, connect –ve terminal of the battery to p-type and +ve terminal to n-type as shown in figure below.
• The applied reverse voltage establishes an electric field which acts in the same direction as the field due to potential barrier. Therefore the resultant field at the junction is strengthened and the barrier height is increased as shown in fig.
• The increased potential barrier prevents the flow of charge carriers across the junction. Thus a high resistance path is established for the entire circuit and hence current does not flow.
When a p-type semiconductor material is suitably joined to n-type semiconductor the contact surface is called a p-n junction. The p-n junction is also called as semiconductor diode.
• The left side material is a p-type semiconductor having –ve acceptor ions and +vely charged holes. The right side material is n-type semiconductor having +ve donor ions and free electrons.• Suppose the two pieces are suitably treated to form pn junction, then there is a tendency for the free electrons from n-type to diffuse over to the p-side and holes from p-type to the n-side . This process is called diffusion.
• As the free electrons move across the junction from n-type to p-type, +ve donor ions are uncovered. Hence a +ve charge is built on the n-side of the junction. At the same time, the free electrons cross the junction and uncover the –ve acceptor ions by filling in the holes. Therefore a net –ve charge is established on p-side of the junction.
• When a sufficient number of donor and acceptor ions is uncovered further diffusion is prevented.
• Thus a barrier is set up against further movement of charge carriers. This is called potential barrier or junction barrier Vo. The potential barrier is of the order of 0.1 to 0.3V.
Note: outside this barrier on each side of the junction, the material is still neutral. Only inside the barrier, there is a +ve charge on n-side and –ve charge on p-side. This region is called depletion layer.
2.1 Biasing: Connecting a p-n junction to an external d.c. voltage source is called
biasing.
1. Forward biasing
2. Reverse biasing
1. Forward biasing
• When external voltage applied to the junction is in such a direction that it cancels the potential barrier, thus permitting current flow is called forward biasing.
• To apply forward bias, connect +ve terminal of the battery to p-type and –ve terminal to n-type as shown in fig.2.1 below.
• The applied forward potential establishes the electric field which acts against the field due to potential barrier. Therefore the resultant field is weakened and the barier height is reduced at the junction as shown in fig. 2.1.
• Since the potential barrier voltage is very small, a small forward voltage is sufficient to completely eliminate the barrier. Once the potential barrier is eliminated by the forward voltage, junction resistance becomes almost zero and a low resistance path is established for the entire circuit. Therefore current flows in the circuit. This is called forward current.
2. Reverse biasing• When the external voltage applied to the junction is in such a direction the potential barrier is increased it is called reverse biasing.
• To apply reverse bias, connect –ve terminal of the battery to p-type and +ve terminal to n-type as shown in figure below.
• The applied reverse voltage establishes an electric field which acts in the same direction as the field due to potential barrier. Therefore the resultant field at the junction is strengthened and the barrier height is increased as shown in fig.
• The increased potential barrier prevents the flow of charge carriers across the junction. Thus a high resistance path is established for the entire circuit and hence current does not flow.
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